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  • Supply Ability: piecesWarranty(Year):1 Year

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Product Specifications

Product Description

Tak Machinery Co., Ltd. Shenzhen R & D of high-speed transistor test separator, is the first non-blanking wait, machinery, test system integration, high efficiency, high-precision automation patented product. Linear vibration-free belt feeding transmission speeds of up to 1000PCS/MIN. Test. Blanking disc using splitter structure, speed up 250PCS/MIN. After the test the different parameters of the transistor, into pre-set blanking box. The high speed sorting machine mechanical stability, the failure rate at the end. Test system is the company with a Japanese company to develop the new results, the test fully functional. The test accuracy, stability and compatibility than the current market, the widespread use of advanced test systems in Japan. The sets of equipment, can produce per hour 15K, as the industry's most cost-effective products.

Mechanical Work

   
Components being tested through the vibration of vibrating feeding dish into the non-linear vibrating feeding system, the feed sent to the divider disk folder folder. Tested in the test station, then sent to the appropriate folder from the disc blanking mouth, blanking the cylinder to open the folder, tested components specified by blanking pipe into the sub-bins. Test negative to enter the waste containers.

Machine features

First, the flat belt conveyors used to send the feed, no vibration, fast and stable.

Second, the disc material claw clip with splitter transmission, precise, stable, very low failure rate.

Third, all functional tests only two test stations, high pressure, the test results are accurate.

Fourth, test the classification of high selectivity, a total of 28 sub-bins, can be set in 27 categories.

Five different parameters tested by the device of the corresponding blanking pipe into the sub-bins, no waiting time blanking, a high increase work efficiency.

Sixth, the scope of the equipment for testing: TO-92, TO-92S, TO-92L, TO-126, TO-220, TO-251, TO-252, TO-220, TO-3P package types such as discrete devices selection tests and compatibility.

VII, the test system than the test voltage, current and other basic parameters, it can also test the thermal resistance, T / S value, IC test current up to 20A.

VIII Touch Tablet PC operating system, no keyboard, no mouse. Simple operation, the data set.

Technical parameters

 
Mechanical Dimensions: 1068LX580WX1050H (mm)

 
Machine weight: about 150Kg

 
Voltage: 220V 50/60HZ

 
Power: about 1KW

 
Air pressure :4-5Kg /

     
BS-1000 test system is a transistor transistor testing in accordance with international principles and the relevant standard test methods --- GB4587, GB12300.GJB128A and industry standards SJ/T10415 design and manufacture, which uses advanced computer control technology to the test in the test conditions set their own test results are automatically sub-file, automatic and automatic statistical power (heat) test. The breakdown voltage test up to 100V, IC test current up to 20A. System can also determine BVceo, BVcbo HFE hard and soft breakdown characteristics and the linearity of K, on the HFE, Vces and BVceo three major parameters can be used to complete a one-time testing different testing conditions. The system can also be important to test the maximum rated current of the transistor parameters of IC indicators and △ Vbe, Rth, such as power performance parameters. System can be measured NON, PNP and Darlington transistors, silicon can also be measured (THYRISTOR). MOSFET (VDMOS), diodes and regulator. This system fully considered the requirements of device manufacturers to achieve high stability, high speed, high-precision three characteristics, a test system can simultaneously connect the work of 5 robot, is a powerful transistor integrated test system.

Work

   
Program controlled by a microcomputer control system voltage source, programmable voltage source, sampling circuit and switching circuit. Automatically adjust the computer programmed according to the setting conditions of the source, applied to the measured transistors. And then sampled by the sampling circuit, the A / D converter in the computer display.

Conditions of Use

   
Temperature: 10 ~ 30 ℃

   
Relative Humidity: 20% ~ 75% RH (30 ℃ pm)

   
Atmospheric pressure: 86 ~ 106Kpa

   
Power supply: 220V ± 10% AC, 50Hz ± 10% around the strong power without interference.

Specifications

1, programmable voltage / current source I Ⅱ, (PMU1, PMU2) accuracy of ± 0.1%
   
a. Voltage: ± 0 ~ 20.000V 16 位 D / A converter, 16-bit A / D sampling, automatic range switching
   
b. Current: ± 0 ~ 2.0000A 16 位 D / A converter, 16-bit A / D sampling, automatic range switching
 
2, programmable voltage / current source (DPS) Accuracy ± 0.5%
   
a. Voltage: 0 ~ 30.00V 12 位 D / A converter, 16-bit A / D sampling, automatic range switching
   
b. Current: 0 ~ 20.00A 12 位 D / A converter, 16-bit A / D sampling, automatic range switching
 
3, program-controlled high-voltage source: (DDS) Accuracy ± 0.5%
a. Voltage: 20 ~ 1000V 12 位 D / A converter, 16-bit A / D sampling, automatic range switching
   
b. Current: 0 ~ 20.00mA 12 位 D / A converter, 16-bit A / D sampling, automatic range switching
 
Test parameters
 
4.1, the breakdown voltage test (BVcbo, BVceo):
    
a. Test conditions: IC (IR) <20mA,
    
b. Test Range: 0 ~ 1000V
    
c. Accuracy: <± (1% + 1digit)
4.2, the breakdown voltage test (BVebo):
    
a. Test conditions: Ib <50mA
    
b. Test Range: 0 ~ 20V
    
c. Accuracy: <± (0.1% + 1digit)
 
5, the leakage current test
    
a. Test conditions: Vcb, Vce, Vr: 0 ~ 1000V, Veb ≤ 20V
    
b. Test Range: 0.01uA ~ 10mA
    
c. Accuracy: <± (1% +1 digit)
   
6, HFE testing
    
a. Test conditions: IC ≤ 20A, Vce = 1 ~ 30V, Ib = 1uA ~ 2A
    
b. Test Range: ≥ 3
    
c. Accuracy: <± (1% +1 digit)
 
7, Vbe, VF testing
    
a. Test conditions: Ie (IF) ≤ 1.0000A
    
b. Test Range: 0 ~ 20.000V
    
c. Accuracy: <± (0.1% +2 digit)
 
8, Vces, Vbes, Vbef, Vdf, VTM test
    
a. Test conditions: IC ≤ 20A Ib ≤ 1.0A Vce = 1 ~ 30V
    
b. Test Range: 0 ~ 30.000V
    
c. Accuracy: <± (1% +1 digit)
 
9, △ Vbe, △ Icbo, △ HFE test
    
a. heating power PT: 1W ~ 100W IC (Ie) ≤ 5A Is ≤ 0 ~ 100mA
    
b. Add the power of time: TP = 0 ~ 1000ms Td = 100 ~ 300us
    
c. Accuracy: <± (1% +2 igit

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